Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor-Reference-Cited by-同舟云学术

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Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor

Published:2004-01 Issue:1 Volume:21 Page:257-261
ISSN:0256-1115
Container-title:Korean Journal of Chemical Engineering
language:en
Short-container-title:Korean J. Chem. Eng.

Author:

Kim Tae Yun,Lee Sang Hyun,Mo Young Hwan,Shim Hyun Wook,Nahm Kee Suk,Suh Eun-Kyung,Park Gyung Soo

Publisher

Springer Science and Business Media LLC

Subject

General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF02705407.pdf

Reference28 articles.

1. Ahn, S.H., Lee, S.H., Nahm, K. S., Suh, E. K. and Hong, M.H., “Catalytic Growth of High Quality GaN Micro-crystals,”J. of Crystal Growth,234, 70 (2002).

2. Berishev, I., Bensaoula, A., Rusakova, I., Karabutov, A., Ugarov, M. and Ageev, V. P., “Field Emission Properties of GaN Films on Si (111),”Appl. Phys. Lett.,73, 1808 (1998).

3. Chen, C. C., Yeh, C. C., Chen, C. H., Yu, M. Y., Liu, H. L., Wu, J. J., Chen, K. H., Chen, L. C., Peng, J. Y. and Chen, Y. F., “Catalytic Growth and Characterization of Gallium Nitride Nanowires,”J. Am. Chem. Soc.,12, 2791 (2001).

4. Dekker, C., “Carbon Nanotubes as Molecular Quantum Wires,”Phys. Today,52, 22 (1999).

5. Demangeot, F., Frandon, J., Renucci, M.A., Briot, O., Gil, B. and Aulombard, R. I., “Raman Determination of Phonon Deformation Potentials in α-GaN,”Solid State Comm.,100, 207 (1996).

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