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Silicide formation by Ar+ ion bombardment of Pd/Si

  • Published:1988-08 Issue:8 Volume:23 Page:2740-2744
  • ISSN:0022-2461
  • Container-title:Journal of Materials Science
  • language:en
  • Short-container-title:J Mater Sci

Author:

Lee R. Y.,Whang C. N.,Kim H. K.,Smith R. J.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam induced modification and nanostructures formation in thin SiC/Pd films on c-Si substrate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-03

2. Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si;ACS Applied Materials & Interfaces;2019-09-24

3. Ion beam induced surface and interface engineering;Surface Science Reports;2011-03

4. The effect of Ar+ irradiation on grain growth and reducing reaction temperature in Pd-silicide formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

5. Ion-induced interfacial mixing in Al/Pd bilayers: incident ion energy and film thickness dependence;Journal of Materials Science;1991-01-01
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