Hole scattering mechanism of strained Si/(111)Si1−x Ge x
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-011-4459-x.pdf
Reference16 articles.
1. Aubry-Fortuna V, Dollfus P, Galdin-Retailleau S. Electron effective mobility in strained-Si/Si1−x Gex MOS devices using Monte Carlo simulation. Solid-State Electron, 2005, 49: 1320–1329
2. Song J J, Zhang H M, Hu H Y, et al. Calculation of band structure in (101)-biaxially strained Si. Sci China Ser G-Phys Mech Astron, 2009, 52(4): 546–550
3. Formicone G F, Vasileska D, Ferry D K. Transport in the surface channel of strained Si on a relaxed Si1−x Gex substrate. Solid-State Electron, 1997, 41(6): 879–885
4. Everett X W, Philippe M, Lucian S, et al. Physics of hole transport in strained silicon MOSFET inversion layers. IEEE Trans Electron Devices, 2006, 53(8): 1840–1850
5. Song J J, Zhang H M, Hu H Y, et al. Valence band structure of strained Si/(111)Si1−x Gex. Sci China Phys Mech Astron, 2010, 53(3): 454–457
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1. The collision frequency model of the solid state plasma for Si/Si 1−x Ge x /Si SPiN device;Solid State Communications;2017-01
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