On the Control of Plasma Parameters and Active Species Kinetics in CF4 + O2 + Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios-Reference-Cited by-同舟云学术

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On the Control of Plasma Parameters and Active Species Kinetics in CF4 + O2 + Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios

Published:2017-05-13 Issue:5 Volume:37 Page:1445-1462
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Efremov Alexander,Lee Junmyung,Kim Jihun

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/article/10.1007/s11090-017-9820-z/fulltext.html

Reference37 articles.

1. Rossnagel SM, Cuomo JJ, Westwood WD (1990) Handbook of plasma processing technology. Noyes Publications, Park Ridge

2. Rooth JR (1995) Industrial plasma engineering. IOP Publishing, Philadelphia

3. Roosmalen AJ, Baggerman JAG, Brader SJH (1991) Dry etching for VLSI. Plenum Press, New York

4. Wolf S, Tauber RN (2000) Silicon processing for the VLSI era. Process technology, vol 1. Lattice Press, New York

5. Lieberman MA, Lichtenberg AJ (1994) Principles of plasma discharges and materials processing. Wiley, New York

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