用于低功率神经形态晶体管的金属氧化物半导体纳米纤维中阳离子比例的合理调整-Reference-Cited by-同舟云学术

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用于低功率神经形态晶体管的金属氧化物半导体纳米纤维中阳离子比例的合理调整

Published:2023-05-23 Issue:8 Volume:66 Page:3251-3260
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Cong Haofei,Chang Yu,Zhou Ruifu,Zhang Wenxin,Sun Guangxin,Xu Peilong,Qin Yuanbin,Ramakrishna Seeram,Liu Xuhai,Wang Fengyun

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2445-y.pdf

Reference48 articles.

1. Pei J, Deng L, Song S, et al. Towards artificial general intelligence with hybrid Tianjic chip architecture. Nature, 2019, 572: 106–111

2. Ling H, Koutsouras DA, Kazemzadeh S, et al. Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing. Appl Phys Rev, 2020, 7: 011307

3. Liu X, Wang F, Su J, et al. Bio-inspired 3D artificial neuromorphic circuits. Adv Funct Mater, 2022, 32: 2113050

4. Cheng Y, Li H, Liu B, et al. Vertical 0D-perovskite/2D-MoS2 van der Waals heterojunction phototransistor for emulating photoelectric-synergistically classical pavlovian conditioning and neural coding dynamics. Small, 2020, 16: 2005217

5. Seo S, Kim B, Kim D, et al. The gate injection-based field-effect synapse transistor with linear conductance update for online training. Nat Commun, 2022, 13: 6431

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