Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector-Reference-Cited by-同舟云学术

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Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

Published:2023-02-17 Issue:6 Volume:66 Page:2364-2371
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Wang Yang,Chen Cheng,Tang Ziming,Lu Huan,Cao Shuiyan,Zhang Wei,Yi Min,Zhang Kai,Liu Yanpeng,Guo Wanlin

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2347-9.pdf

Reference49 articles.

1. Carvalho A, Wang M, Zhu X, et al. Phosphorene: From theory to applications. Nat Rev Mater, 2016, 1: 16061

2. Liu Y, Rodrigues JNB, Luo YZ, et al. Tailoring sample-wide pseudo-magnetic fields on a graphene-black phosphorus heterostructure. Nat Nanotech, 2018, 13: 828–834

3. Liu Y, Yudhistira I, Yang M, et al. Phonon-mediated colossal magnetoresistance in graphene/black phosphorus heterostructures. Nano Lett, 2018, 18: 3377–3383

4. Yuan H, Liu X, Afshinmanesh F, et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p—n junction. Nat Nanotech, 2015, 10: 707–713

5. Koenig SP, Doganov RA, Schmidt H, et al. Electric field effect in ultrathin black phosphorus. Appl Phys Lett, 2014, 104: 103106

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