Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface-Reference-Cited by-同舟云学术

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Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

Published:2022-07-21 Issue:1 Volume:66 Page:211-218
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Sun Jialiang,Lin Jiajie,Jin Tingting,Chi Chaodan,Zhou Min,Kudrawiec Robert,Li Jin,You Tiangui,Ou Xin

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2135-y.pdf

Reference32 articles.

1. Georgakilas A, Stoemenos J, Tsagaraki K, et al. Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy. J Mater Res, 1993, 8: 1908–1921

2. Matthews JW, Blakeslee AE. Defects in epitaxial multilayers. J Cryst Growth, 1975, 29: 273–280

3. Ye T, Suo Z, Evans AG. Thin film cracking and the roles of substrate and interface. Int J Solids Struct, 1992, 29: 2639–2648

4. Tang MC, Park JS, Wang ZC, et al. Integration of III-V lasers on Si for Si photonics. Prog Quantum Electron, 2019, 66: 2639–2648

5. Bruel M. Silicon on insulator materials technology. Electron Lett, 1995, 31: 1201–1202

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate;Materials Science in Semiconductor Processing;2024-06

2. Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature;Journal of Semiconductors;2023-05-01

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