Author:
Ren Jinhua,Li Kaiwen,Yang Jianwen,Lin Dong,Kang Haoqing,Shao Jingjing,Fu Ruofan,Zhang Qun
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference54 articles.
1. Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432: 488–492
2. Liu G, Liu A, Zhu H, et al. Low-temperature, nontoxic waterinduced metal-oxide thin films and their application in thin-film transistors. Adv Funct Mater, 2015, 25: 2564–2572
3. Dong J, Han D, Li H, et al. Effect of Al doping on performance of ZnO thin film transistors. Appl Surf Sci, 2018, 433: 836–839
4. Yang J, Ren J, Lin D, et al. Amorphous nickel incorporated tin oxide thin film transistors. J Phys D-Appl Phys, 2017, 50: 355103
5. Haxel G, Hedrick JB, Orris GJ, et al.
Rare earth elements: critical resources for high technology, US Geological Survey fact sheet 087–02. Technical report, US Geological Survey, 2002
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