Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films-Reference-Cited by-同舟云学术

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Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films

Published:2001-01 Issue:1 Volume:72 Page:85-87
ISSN:0947-8396
Container-title:Applied Physics A Materials Science & Processing
language:en
Short-container-title:Appl Phys A

Author:

Li W.P.,Liu Y.M.,Zhang R.,Chen J.,Cheng P.,Yuan X.L.,Zhou Y.G.,Shen B.,Jiang R.L.,Shi Y.,Liu Z.G.,Zheng Y.D.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390000568.pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of SrTiO3 buffer layer on electrical, ferroelectric memory, and polarization reversal studies of spin-coated ferroelectric 0.6Ba (Zr0·2Ti0.8)O3-0.4(Ba0·7Ca0.3)TiO3 thin film in MFIS structure;Current Applied Physics;2023-07

2. Ionizing radiation response of bismuth titanate-based metal-ferroelectric-semiconductor (MFS) type capacitor;Microelectronics Reliability;2022-06

3. The density of interface states and their relaxation times in Au/Bi4 Ti3 O12 /SiO2 /n-Si(MFIS) structures;Surface and Interface Analysis;2011-02-24

4. Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications;Journal of Physics D: Applied Physics;2009-01-30

5. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures;Vacuum;2008-06

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