Growth of wurtzite GaN films on αAl 2 O 3 substrates using light-radiation heating metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth of wurtzite GaN films on αAl 2 O 3 substrates using light-radiation heating metal-organic chemical vapor deposition

Published:1999-05-01 Issue:5 Volume:68 Page:593-596
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Shen B.,Zhou Y.G.,Chen Z.Z.,Chen P.,Zhang R.,Shi Y.,Zheng Y.D.,Tong W.,Park W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050946.pdf

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique;Semiconductor Science and Technology;2020-10-13

2. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22

3. Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film;Applied Physics A;2018-01-11

4. Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition;Crystal Growth & Design;2014-11-17

5. GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model;Vacuum;2010-05

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