Electrical and optical characterization of p-type ZNSe for diode laser structures-Reference-Cited by-同舟云学术

Electrical and optical characterization of p-type ZNSe for diode laser structures

Published:1993-05 Issue:5 Volume:22 Page:431-435
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Simpson J.,Wang S. Y.,Stewart H.,Wallace J.,Adams S. J. A.,Hauksson I.,Prior K. A.,Cavenett B. C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02661608.pdf

Reference12 articles.

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2. H. Jeon, J. Ding, W. Patterson, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 59, 3619 (1992).

3. S.Y. Wang, J. Simpson, H. Stewart, S.J.A. Adams, I. Hauksson, Y. Kawakami, M.R. Taghizadeh, K.A. Prior and B.C. Cavenett,Proc. Conf. Wide Bandgap SemicoNDuctors, Physica, to be published.

4. M.A. Haase, J. Qiu, J.M. DePuydt and H. Cheng, Int. Symp. GaAs and Related Compounds, Seattle 1991, Inst. Phys. Conf. Series No. 120, p. 9.

5. K. Ohkawa, T. Kavasawa and T. Mitsuyu,J. Cryst. Growth 111, 797 (1991).

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