Compensation processes in molecular beam epitaxially grown zinc selenide doped with nitrogen-Reference-Cited by-同舟云学术

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Compensation processes in molecular beam epitaxially grown zinc selenide doped with nitrogen

Published:1994-04 Issue:1-4 Volume:138 Page:94-98
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Prior K.A.,Murdin B.,Pidgeon C.R.,Wang S.Y.,Hauksson I.,Mullins J.T.,Horsburgh G.,Cavenett B.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

2. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

3. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

4. Recent developments in the MBE growth of wide bandgap II – VI semiconductors for laser diodes and LEDs

5. Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behaviors of group Va elements in ZnSe;Journal of Crystal Growth;2006-12

2. Compensation of nitrogen acceptor in ZnSe:N/ZnSe grown by MOCVD;Journal of Crystal Growth;2000-12

3. Annealing Effect of ZnSe:N/ZnSe Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1999-05-15

4. Growth and annealing effect of high-quality ZnSe:N/ZnSe by MOCVD;Journal of Crystal Growth;1999-04

5. Wide band-gap II–VI compounds—can efficient doping be achieved?;Vacuum;1998-07

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