Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE-Reference-Cited by-同舟云学术

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Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

Published:2000-06 Issue:1 Volume:16 Page:19-24
ISSN:1434-6028
Container-title:The European Physical Journal B
language:en
Short-container-title:Eur. Phys. J. B

Author:

Geddo M.,Ferrini R.,Guizzetti G.,Patrini M.,Franchi S.,Frigeri P.,Salviati G.,Lazzarini L.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s100510070244.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of the thermoelectric figure of merit in a quantum dot due to external ac field;Physics Letters A;2013-08

2. Characteristics of the Anodic Films on an AZ91D Mg Alloy Prepared by Plasma Electrolytic Oxidation and Burning Surface Treatment;Korean Journal Metals and Materals;2013-06-10

3. Quantum dot strain engineering of InAs∕InGaAs nanostructures;Journal of Applied Physics;2007-01-15

4. Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance;Physica E: Low-dimensional Systems and Nanostructures;2005-01

5. MESOSCOPIC TRANSPORT THROUGH A QUANTUM DOT–CARBON NANOTUBE SYSTEM IN AN APPLIED MICROWAVE FIELD;International Journal of Modern Physics B;2004-06-10

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