The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS-Reference-Cited by-同舟云学术

The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS

Published:1990-05 Issue:5 Volume:19 Page:449-452
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

McLarty P. K.,Ioannou D. E.,Hughes H. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02658005.pdf

Reference18 articles.

1. S. L. Partridge, Technical Digest, International Electron Devices Meeting, Los Angeles, CA, Dec. 7-10, 1986 (IEEE, Piscataway, NJ, 1987), p. 428.

2. K. Das, G. Shorthouse, J. Butcher and K. V. Armand, Microelectron.J.14, (1983).

3. J. Y. Lee, D. C. Meyer and P. K. Vasudev, Microelectron J.14, 5 (1983).

4. J. Margail, I. Stoemenos, C. Jaussaud, M. Dupuy, P. Martin, B. Blanchard and M. Bruel, in Energy beam Solid Interactions and Transient Thermal Processing, Ed. V. T. Nguyen and A. G. Cullis (Les Editions de Physique, Les Ulis) p. 519 (1986).

5. B. Y Mao, M. Matloubain, C. E. Chen, R. Sundaresan and C. Slawinski, IEEE Electron Device Lett. EDL-8, 306 (1987).

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