Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems
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Published:2022-06-06
Issue:7
Volume:54
Page:
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ISSN:0306-8919
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Container-title:Optical and Quantum Electronics
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language:en
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Short-container-title:Opt Quant Electron
Author:
O’Donovan MichaelORCID, Farrell PatricioORCID, Streckenbach Timo, Koprucki ThomasORCID, Schulz StefanORCID
Abstract
AbstractUnderstanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based light emitting diode (LED) structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems. To disentangle hole transport from electron transport and carrier recombination processes, we focus our attention on uni-polar (p-i-p) systems. The calculations employ our recently established multi-scale simulation framework that connects atomistic tight-binding theory with a macroscale drift-diffusion model. In addition to alloy fluctuations, we pay special attention to the impact of quantum corrections on hole transport. Our calculations indicate that results from a virtual crystal approximation present an upper limit for the hole transport in a p-i-p structure in terms of the current-voltage characteristics. Thus we find that alloy fluctuations can have a detrimental effect on hole transport in (In,Ga)N quantum well systems, in contrast to uni-polar electron transport. However, our studies also reveal that the magnitude by which the random alloy results deviate from virtual crystal approximation data depends on several factors, e.g. how quantum corrections are treated in the transport calculations.
Funder
Science Foundation Ireland Deutsche Forschungsgemeinschaft Leibniz competition 2020 University College Cork
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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