1. Ajisawa, A., Oda, N.: Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing. J. Electron. Mater. 24, 1105–1111 (1995)
2. Bahir, G., Adar, R., Fastow, R.: The electrical properties of metal contact Au and Ti on $$p$$ -type HgCdTe. J. Vac. Sci. Technol. B 9, 266–272 (1991)
3. Chen, Y.G., Hu, W.D., Chen, X.S., Wang, J., Wang, X.F., Yu, C.H., Lu, W.: Temperature dependence on photosensitive area extension in HgCdTe photodiodes using laser beam induced current. Opt. Eng. 51, 036401 (2012)
4. Gopal, V., Singh, S.K., Mehra, R.M.: Analysis of dark current contributions in mercury cadmium telluride junction diodes. Infrared Phys. Technol. 43, 317–326 (2002)
5. Gopal, V., Gupta, S., Bhan, R.K., Pal, R., Chaudhary, P.K., Kumar, V.: Modeling of dark characteristics of mercury cadmium telluride $$\text{ n}^{+}$$ -p junctions. Infrared Phys. Technol. 44, 143–152 (2003)