Author:
Radosavljević A.,Radovanović J.,Milanović V.,Indjin D.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Ariyawansa, G., Rinzan, M., Strassburg, M., Dietz, N., Perera, A., Matsik, S., Asghar, A., Ferguson, I., Luo, H., Liu, H.: GaN/AlGaN heterojunction infrared detector responding in 8–14 and 20–70 $$\mu $$ μ m ranges. Appl. Phys. Lett. 89, 141122 (2006)
2. As, D.J.: Recent developments on non-polar cubic group III-nitrides for. SPIE Proc. Quantum Sens. Nanophotonic Devices VII 7608, 76080 (2010)
3. As, D.J., Mietze, C.: MBE growth and applications of cubic AlN/GaN quantum wells. Phys. Status Solidi A 210, 474–479 (2013)
4. Beeler, M., Trichas, E., Monroy, E.: III-nitride semiconductors for intersubband optoelectronics: a review. Semicond. Sci. Technol. 28, 074022 (2013)
5. Chemla, D.S., Shah, J.: Many-body and correlation effects in semiconductors. Nature 411, 549–557 (2001)
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