GaN∕AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges-Reference-Cited by-同舟云学术

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GaN∕AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges

Published:2006-10-02 Issue:14 Volume:89 Page:141122
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ariyawansa G.,Rinzan M. B. M.,Strassburg M.,Dietz N.,Perera A. G. U.,Matsik S. G.,Asghar A.,Ferguson I. T.,Luo H.,Liu H. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2360205

Reference21 articles.

1. Near- and mid-infrared detection using GaAs∕InxGa1−xAs∕InyGa1−yAs multiple step quantum wells

2. Voltage-tunable four-color quantum-well infrared photodetectors

3. Background-limited terahertz quantum-well photodetector

4. AlGaAs emitter∕GaAs barrier terahertz detector with a 2.3 THz threshold

5. High-speed 1.3μm tunnel injection quantum-dot lasers

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1. Tuning of the Berreman mode of GaN/AlxGa1-xN heterostructures on sapphire: The role of the 2D-electron gas in the mid-infrared;Optical Materials;2024-01

2. Design and simulation of bias-selectable few photon dual-colour photodetector operating in visible and near-infrared regions;Optoelectronics Letters;2020-08-18

3. Silicon carbide and graphene based UV-IR dual-color detector;Optoelectronics Letters;2019-05

4. Heterojunction and superlattice detectors for infrared to ultraviolet;Progress in Quantum Electronics;2016-07

5. Terahertz Detection Devices;Reference Module in Materials Science and Materials Engineering;2016

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