Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Beijing education commission project
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Assefa, S., Xia, F., Vlasov, Y.A.: Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature 464, 80–84 (2010)
2. Chen, H.T., Verbist, J., Verheyen, P., Heyn, P.D., Lepage, G., Coster, J.D., et al.: Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si. IEEE Photon. J. 7, 1–8 (2015)
3. Chen, H., Verheyen, P., Heyn, P.D., Lepage, G., Coster, J.D., Balakrishnan, S., et al.: −1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond”. Opt. Express 24, 4622–4631 (2016)
4. Cong, H., Xue, C., Liu, Z., Li, C., Cheng, B., Wang, Q.: High-speed waveguide-integrated Ge/Si avalanche photodetector. Chin. Phys. B 25(5), 058503 (2016)
5. Czuba, K., Jurenczyk, J., Kaniewski, J.: A study of InGaAs/InAlAs/InP avalanche photodiodes. Solid State Electron. 104, 109–115 (2015)
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