Author:
Hassan Warda H. A.,Kamh Sanaa A.,Soliman Fouad A. S.,Abd El-Basit Wafaa
Abstract
AbstractThe significant parameters for a high-speed optoelectronic switch were the transient times. In the time domain, there is a time elapsed on the order of microseconds between applying a current pulse and seeing an output. Therefore, the present work aimed to give a closer look on the factors affecting the transient times of the optocoupler switching action, namely; delay (td)-, rise (tr)-, in addition to storage (ts)- and fall (tf)-times. The turn-on time (Ton = td + tr) and turn-off time (Toff = ts + tf) of the optocoupler (type 4N25) were investigated and plotted under the influence of different operating conditions such as: load resistance (RL), forward LED drive current (IF), bias collector voltage (VCC), emitter–base resistance (RBE), and ambient temperature.
Funder
Women's College - Ain Shams University
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Abd El-Basit, W., Hassan, W.H.A., Kamh, S.A., Soliman, F.A.S.: Operation of optocouplers under the influence of extreme environmental conditions. J. Nanoelectron. Optoelectron. (2017). https://doi.org/10.1166/jno.2017.1999
2. Ahn, S.H., Sun, G.M., Baek, H.: Turn-off time improvement by fast neutron irradiation on pnp Si bipolar junction transistor. Nucl. Eng. Technol. 54(2), 501–506 (2022). https://doi.org/10.1016/j.net.2021.11.009
3. Chen, P., Wang, L., Wu, X., Lu, S.: High-voltage isolation current sensor by using signal modulation method. Int. J. Control Autom. 7(3), 333–348 (2014). https://doi.org/10.14257/ijca.2014.7.3.32
4. Eleazar, F.: Understanding phototransistor optocouplers. application note ANO007 (2023). https://www.we-online.com/components/media/o760909v410%20ANO007a_EN.pdf
5. El-Ghanam, S.M., Basit, W.A.: Performance of electronic switching circuits based on bipolar power transistors at low temperature. Cryogenics (2011). https://doi.org/10.1016/j.cryogenics.2010.12.005