Electrical, optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base

Author:

Averin S. V.,Kuznetzov P. I.,Zhitov V. A.,Zakharov L. Yu,Kotov V. M.

Funder

Russian Foundation for Basic Research

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics;Semiconductor Science and Technology;2024-08-12

2. ZnSe-Based Photodetectors;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

3. First-principles study on the electronic and optical properties of the ZnTe/InP heterojunction;Journal of Computational Electronics;2019-06-08

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