1. Bellotti, E., Orsogna, D.D.: Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors. IEEE Journal of Quantum Electronics. 42, 418–426 (2006)
2. Device simulator Sentaurus Device (former ISE-DESSIS) Ver. 2007. 03.
3. Gopal V., Dhar V.: Resistance-area product of diodes in a long-wavelength infrared HgCdTe mosaic array. Infrared Phys. Technol. 43, 51–59 (2002). doi: 10.1016/S1350-4495(01)00116-5
4. Hu W.D., Chen X.S., Quan Z.J., Xia C.S., Lu W., Yuan H.J.: Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Appl. Phys. Lett. 89, 243501.1–243501.3 (2006). doi: 10.1063/1.2405416
5. Jo N.H., Yoo S.D., Ko B.G., Lee S.W., Jang J., Lee S.D., Kwack K.D.: Two-dimensional numerical simulation of HgCdTe infrared detectors. SPIE 3436, 50–60 (1998). doi: 10.1117/12.328063