1. Bellotti, E., Moresco, M., Bertazzi, F.: Theory of high field transport and impact ionization in III-Nitride semiconductors. IWCE (2010). doi: 10.1109/IWCE.2010.5677987
2. Dong, K.X., Chen, D.J., Lu, H., Liu, B., Han, P., Zhang, R., Zheng, Y.D.: Exploitation of polarization in back-Illuminated AlGaN avalanche photodiodes. IEEE Photon. Technol. Lett. 25, 1510–1513 (2013)
3. Guo, X.Y., Rowland, L.B., Dunne, G.T., Fronheiser, J.A., Sandvik, P.M., Beck, A.L., Campbell, J.C.: Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett. 18, 136–138 (2006)
4. Hu, W.D., Chen, X.S., Quan, Z.J., Xia, C.S., Lu, W., Ye, P.D.: Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. J. Appl. Phys. 100, 074501 (2006a)
5. Hu, W.D., Chen, X.S., Quan, Z.J., Xia, C.S., Lu, W., Yuan, H.J.: Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Appl. Phys. Lett. 89, 243501 (2006b)