Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors-Reference-Cited by-同舟云学术

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Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors

Published:2019-12-19 Issue:1 Volume:52 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Wang Xiaodong,Chen Yulu^ORCID,Chen Xiaoyao,Wang Bingbing,Zhang Chuansheng,Zhang Haoxing

Funder

Shanghai Rising-Star Program

Young Elite Scientists Sponsorship Program by CAST

National Natural Science Foundation of China

Shanghai Sailing Program

Shanghai Youth Top-Notch Talent Development Program

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11082-019-2150-z.pdf

Reference15 articles.

1. Garcia, J.C., Haegel, N.M., Zagorski, E.A.: Alternate operating mode for long wavelength blocked impurity band detectors. Appl. Phys. Lett. 87, 043502 (2005)

2. Hu, W.D., Chen, X.S., Ye, Z.H., Feng, A.L., Yin, F., Zhang, B., Liao, L., Lu, W.: Dependence of ion-implant-induced LBIC novel characteristics on excitation intensity for long-wavelength HgCdTe-based photovoltaic infrared detector pixel arrays. IEEE J. Sel. Top. Quantum Electron. 19, 4100107 (2013)

3. Hu, W., Ye, Z., Liao, L., Chen, H., Chen, L., Ding, R., He, L., Chen, X., Lu, W.: A 128 × 128 longwavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultra-low spectral crosstalk. Opt. Lett. 39, 5130–5133 (2014)

4. Martin, B.G., Fathauer, R.W., Jones, E.W., Krabach, T.N., Dejewski, S.M.: Blocking injected dark current in impurity-band-conduction photodetectros using a PtSi Schottky barrier. Appl. Phys. Lett. 67, 774–776 (1995)

5. Qiu, W.C., Hu, W.D., Chen, L., Lin, C., Cheng, X.A., Chen, X.S., Lu, W.: Dark current transport and avalanche mechanism in HgCdTe electron-avalanche photodiodes. IEEE Trans. Electron Devices 62, 1926–1931 (2015)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOSFET modeling of 0.18μm CMOS technology at 4.2K using BP neural network;Microelectronics Journal;2023-02

2. Progress and challenges in blocked impurity band infrared detectors for space-based astronomy;Science China Physics, Mechanics & Astronomy;2022-06-24

3. Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors;2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2021-09-13

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