MOSFET modeling of 0.18μm CMOS technology at 4.2K using BP neural network

Author:

Wang Qiuwei,Ye Mao,Li Yao,Zheng Xiaoxiao,He Jiaji,Du Jun,Zhao Yiqiang

Funder

State Grid Corporation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A low power cryogenic CMOS ROIC Design for 512 × 512 IRFPA;Zhao;J. Circuits Syst. Comput.,2013

2. Uniformly broadband far-infrared response from the photocarrier tunneling of mesa Si: P blocked-impurity-band detector;Chen;IEEE Trans. Electron Devices,2020

3. Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors;Wang;Opt. Quantum Electron.,2020

4. 15.5 cryo-CMOS circuits and systems for scalable quantum computing;Charbon,2017

5. A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics;Jazaeri,2019

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