A model of oxide film originating at thermal oxidation of GaAs-Reference-Cited by-同舟云学术

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A model of oxide film originating at thermal oxidation of GaAs

Published:1977-06 Issue:6 Volume:27 Page:672-681
ISSN:0011-4626
Container-title:Czechoslovak Journal of Physics
language:en
Short-container-title:Czech J Phys

Author:

Navrátil K.,Ohlídal I.,Lukeš F.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF01587521.pdf

Reference17 articles.

1. Navrátil K., Czech. J. Phys.B 18 (1968), 266.

2. Lukeš F., Navrátil K., Sommer I., Ohlídal I., Folia Facultatis Scientiarum Naturalium Universitatis Purkynianae Brunensis, Physica12, No 7 (1971), 5.

3. Vašíček A., Optics of Thin Films, North Holl. Publ. Comp. Amsterdam 1960.

4. Stern F., Phys. Rev.A 133 (1964), 1653.

5. Sturge M. D., Phys. Rev.127 (1962), 768.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy;Surface and Interface Analysis;2004-08

2. Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation;Microchimica Acta;2004-04-01

3. Optical analysis by means of spectroscopic reflectometry of single and double layers with correlated randomly rough boundaries;Optical Engineering;1995-06-01

4. The physical structure of the interface between single-crystal GaAs and its oxide film;Thin Solid Films;1979-01

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