Author:
Pralgauskaitė S.,Palenskis V.,Matukas J.
Publisher
Kluwer Academic Publishers
Reference8 articles.
1. A. Dandridge and H. F. Taylor, Correlation o flow-frequency intensity and frequency fluctuations in GaAlAs lasers, IEEE J. Quant. Electron. QE-18 (1982) 1738–1750.
2. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, Progress in long-wavelenght strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers, IEEE J. Quant. Electron. 30 (1994) 477–499.
3. B. K. Jones, Electrical noise as a measure of quality and reliability in electronic devices, Adv. electron. electron phys. 87 (1994) 201–257.
4. J. Matukas and V. Palenskis, Low-frequency noise of the metal-gallium arsenide contact at various treatment of semiconductor surface, Lith. Phys. J. 36 (1996) 39–48.
5. J. F. Hazell, J. G. Simmons, J. D. Evans, and C. Blaauw, The effect of varying barrier height on the operational characteristics of 1.3 μm strained-layer MQW lasers, IEEE J. Quant. Electron. 34 (1998) 2358–2363.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献