Growth of tin-doped indium antimonide for magnetoresistors-Reference-Cited by-同舟云学术

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Growth of tin-doped indium antimonide for magnetoresistors

Published:1997-10 Issue:10 Volume:26 Page:1237-1243
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Partin D. L.,Green L.,Heremans J.,Thrush C. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-997-0026-7.pdf

Reference15 articles.

1. J. Heremans, J. Phys. D; Appl. Phys. 26, 1149 (1993).

2. R.M. Biefeld, S.R. Kurtz and I.J. Fritz, J. Electron. Mater. 18, 775 (1989).

3. R.M. Biefeld, J.R. Wendt and S.R. Kurtz, J. Cryst. Growth 107, 836 (1991).

4. R.M. Biefeld, B.T. Cunningham, S.R. Kurtz and J.R. Wendt, Mater. Res. Soc. Symp. Proc. 216, (Pittsburgh, PA: Mater. Res. Soc., 1991), p. 175.

5. D.L. Partin and J. Heremans, Handbook on Semiconductors, vol. 3a, ed. T.S. Moss and S. Mahajan (New York: North-Holland, 1994), p. 369.

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1. Pulsed Vapor-Liquid-Solid Growth of Antimony Selenide and Antimony Sulfide Nanowires;Advanced Materials;2009-08-21

2. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials;Materials Science and Engineering: R: Reports;2002-03

3. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999

4. The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors;Journal of Crystal Growth;1998-12

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