A kinetic study of structured surface relief patterning of GaP $$(\bar 1\bar 1\bar 1)$$-Reference-Cited by-同舟云学术

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A kinetic study of structured surface relief patterning of GaP $$(\bar 1\bar 1\bar 1)$$

Published:1998-03 Issue:3 Volume:27 Page:114-121
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Berdinskikh T.,Ruda H. E.,Mei X. Y.,Buchanan M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0200-6.pdf

Reference36 articles.

1. B. Tuck, J. Mater. Sci. 10, 321 (1975).

2. J.L. Vossen and W. Kern, Thin Film Processes (New York: Academic Press, 1978), p. 401.

3. K. Sangwal, Etching of Crystals, (Amsterdam: Noth-Holland, 1987), p. 205.

4. EMISD atareviews Series;S. Adachi,1991

5. P.H.L. Notten, J.E.A.M. van den Meeraker and J.J. Kelly, Etching of III-V Semiconductors, (Oxford: Elsevier Advanced Technology, 1991), p. 349.

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3. Layered Growth of Lattice-Mismatched Ga x In1−x P on GaP Substrates by Liquid Phase Epitaxy;Journal of Electronic Materials;2014-01-10

4. An experimental study of the reactive ion etching (RIE) of GaP using BCl3 plasma processing;Materials Science and Engineering: B;2007-10

5. High-Throughput GaP Microprobe Array having Uniform Aperture Size Distribution for Near-Field Optical Memory;Japanese Journal of Applied Physics;2002-04-15

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