Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application-Reference-Cited by-同舟云学术

Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application

Published:2022-01-21 Issue:6 Volume:30 Page:622-631
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Progress in Photovoltaics

Author:

Woude Daan¹^ORCID,Krabben Luc¹,Bauhuis Gerard¹,Eerden Maarten¹^ORCID,Kim Jae Jin²,Mulder Peter¹,Smits Joost³,Vlieg Elias¹,Schermer John¹

Affiliation:

1. Institute of Molecules and Materials Radboud University Nijmegen Netherlands

2. Analytical Chemistry, Structure and Imaging Shell International Exploration and Production Inc. Houston TX USA

3. Long Range Research and Experimentation Shell Global Solutions International B.V Amsterdam Netherlands

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3534

Reference50 articles.

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3. Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

4. Intrinsic radiation tolerance of ultra-thin GaAs solar cells

5. PollySJ NelsonGT D'RozarioJR TatavartiR HubbardSM.Radiation effects in thinned GaAs photovoltaics incorporating DBRs for improved radiation tolerance of multijunctions. In:Conference Record of the IEEE Photovoltaic Specialists Conference;2019:2818‐2821.

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