1. J.C. Zolper, GaN and Related Materials, Vol. 2 of Optoelectronic Properties of Semiconductors and Superlattices, (New York: Gordon and Breach, 1997); J.C. Zolper, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, C. Yuan and R.A. Stall, Proc. Vol. 95–21 (Pennington, NJ: Electrochemical Society, 1995), p. 144; J.C. Zolper and R.J. Shul, MRS Bulletin 22, 36 (1997); J.C. Zolper, Proc. Vol. 97–34 (Pennington, NJ: Electrochemical Society, 1997), p. 76; J.C. Zolper, R.J. Shul, A.G. Baca, S.J. Pearton, C.R. Abernathy, R.G. Wilson, R.A. Stall and M. Shur, Proc. Vol. 96-11 (Pennington, NJ: Electrochemical Society, 1996), p. 149; J.C. Zolper, J. Cryst. Growth 178, 175 (1997).
2. J.C. Zolper, R.J. Shul, A.G. Baca, R.G. Wilson, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 68, 2273 (1996).
3. H.P. Maruska, M. Lioubtchenko, T.G. Tetreault, M. Osinski, S.J. Pearton, M. Schurman, R. Vaudo, S. Sakai, Q. Chen and R.J. Shul, Mater. Res. Soc. Symp. Proc. 483, (Pittsburgh, PA: Mater. Res. Soc., 1998), p. 345.
4. See for example, N. Newman, Proc. Vol. 96–11 (Pennington, NJ: Electrochemical Society, 1996), p. 1; S. Porowski and I. Grzegory, GaN and Related Materials, Vol. 2 of Optoelectronic Properties of Semiconductors and Superlattices (New York: Gordon and Breach, 1997); T. Matsuoka, T. Sasaki and A. Katsui, Optoelectronics 5, 53 (1990).
5. J.C. Zolper, J. Han, S.B. Van Deusen, R.M. Biefeld, M.H. Crawford, J. Han, T. Suski, J.M. Baranowski and S.J. Pearton, Mater. Res. Soc. Symp. Proc. 482 (Pittsburgh, PA: Mater. Res. Soc., 1998), p. 609.