Nano-Crossbar Memories Comprising Parallel/Serial Complementary Memristive Switches
Author:
Publisher
Springer Science and Business Media LLC
Subject
Biomedical Engineering,Bioengineering
Link
http://link.springer.com/content/pdf/10.1007/s12668-014-0132-y.pdf
Reference33 articles.
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3. Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., et al. (2012). Metal-Oxide RRAM. Proceedings of the IEEE, 6, 1951–1970.
4. Chua, L. O. (2011). Resistance switching memories are memristors. Applied Physics, 4, 765–783.
5. Chua, L. O. (1971). Memristor—the missing circuit element. IEEE Trans Circuit Theory, 18, 507–519.
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