Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses-Reference-Cited by-同舟云学术

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Published:2022-01-13 Issue:1 Volume:4 Page:297-307
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Khan Muhammad Umair¹²^ORCID,Furqan Chaudhry Muhammad²³,Kim Jungmin¹,Khan Sobia Ali⁴,Saqib Qazi Muhammad¹,Chougale Mahesh Y.¹,Shaukat Rayyan Ali¹,Kang Moon Hee⁴,Kobayashi Nobuhiko P.⁵^ORCID,Bae Jinho¹^ORCID,Kwok Hoi-Sing²³

Affiliation:

1. Department of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, Republic of Korea

2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong

3. State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong

4. School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea

5. Baskin School of Engineering, University of California Santa Cruz, 1156 High Street, Santa Cruz, California 95064, United States

Funder

Jeju National University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01006

Reference69 articles.

1. Khan, M. U. All Printed Resistive Switching Memory Devices Based on Solution Processed Materials for Wearable Electronics. Jeju National University Graduate School, Jeju, Thesis 2019.

2. Soft and flexible: core-shell ionic liquid resistive memory for electronic synapses

3. Polymer Nanocomposites for Resistive Switching Memory

4. Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device

5. Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

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