A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition-Reference-Cited by-同舟云学术

A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition

Published:1991-03 Issue:3 Volume:20 Page:251-259
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Ren XiaoWei,Ozturk Mehmet C.,Wortman Jimmie J.,Blat Catherine,Niccolian Edward

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651901.pdf

Reference38 articles.

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3. B. Newboe, “Cluster tools: a process solution?”, Semicond. Int., p. 82 (July 1990).

4. J. R. Hollahan and R. S. Rosier. “Plasma deposition of in- organic thin films.” Thin Film Process., ed. Vossen and Kern, Academic Press, New York, (1987).

5. J. L. Vossen and W. Kern, Physics Today33, 26, (1980).

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