Cener for advanced electronic materials processing-Reference-Cited by-同舟云学术

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Cener for advanced electronic materials processing

Published:1993-01 Issue:1 Volume:81 Page:42-59
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Masnari N.A.,Hauser J.R.,Lucovsky G.,Maher D.M.,Markunas R.J.,Ozturk M.C.,Wortman J.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx4/5/5448/00752025.pdf?arnumber=752025

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH[sub 4] and N[sub 2]O;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

2. Ultrathin oxide-nitride gate dielectric MOSFET's;IEEE Electron Device Letters;1998-04

3. Integrated dynamic simulation of rapid thermal chemical vapor deposition of polysilicon;IEEE Transactions on Semiconductor Manufacturing;1998

4. Time-dependent dielectric breakdown measurements on RPECVD and thermal oxides;Thin Solid Films;1996-05

5. Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-03

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