Breeding melon for resistance to Fusarium wilt: recent developments

Abstract

AbstractMelon Fusarium wilt (MFW), caused by Fusarium oxysporum f. sp. melonis (Fom), is one of the most destructive diseases of melon (Cucumis melo L.). The development and deployment of resistant cultivars is generally considered to be the best approach to control MFW. Based on the host resistance genes associated with variants of this pathogen, Fom isolates were classified into four physiological races designated 0, 1, 2, and 1,2. Two dominant resistance genes, Fom-1 and Fom-2, control resistance to races 0 and 2, and 0 and 1, respectively. Fom isolates classified as race 1,2 are able to induce disease in melon lines carrying the above resistance genes. Many sources of resistance to Fom races 0, 1, and 2 have been reported. Partial resistance to race 1,2 controlled by polygenic recessive genes was only detected in a few Far Eastern melon accessions, except for the breeding line BIZ where complete resistance was described. Identification of DNA markers tightly linked to genes conferring resistance to Fom has immediate application in MFW resistance breeding programs. The Fom-2 gene has been cloned, and it encodes a protein with a nucleotide binding site (NBS) and leucine-rich repeats domain (LRR). Based on the sequence of this domain, some molecular markers linked to this gene were developed. Several DNA markers linked to Fom-1 have also been described. However, the usefulness of these markers was variety-dependent. Therefore, their combined use would be very useful in marker assisted selection for introducing resistance to Fom races 0 and 2 in melon. Recently, these markers were used for the positional cloning of this gene, which encoded a protein with a NBS–LRR domains that shows similarity to the toll and interleukin-1 receptores (TIR). Regarding Fom race 1,2, nine QTL were detected on five linkage groups by composite interval mapping. In this paper we review the current knowledge of MFW disease, and focus on genetic resistance to Fom and marker-assisted selection for resistance.