Gm-boosted current-reuse inductive-peaking common source LNA for 3.1–10.6 GHz UWB wireless applications in 32 nm CMOS
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/article/10.1007/s10470-018-1290-6/fulltext.html
Reference19 articles.
1. FCC. (2002). Revision of Part 15 of the Commission's Rules Regarding Ultra-wide-band Transmission System, Technical Report, ET-Docket, pp. 98–153.
2. Arshad, S., Zafar, F., Ramzan, R., & Wahab, Q. (2013). Wideband and multiband CMOS LNAs: State-of-the-art and future prospects. Microelectronics Journal, 44(9), 774–786.
3. Lo, Y. T., & Kiang, J. F. (2011). Design of wideband LNAS using parallel-to-series resonant matching network between common-gate and common-source stages. IEEE Transactions on Microwave Theory and Techniques, 59(9), 2285–2294. https://doi.org/10.1109/tmtt.2011.2160080 .
4. Arshad, S., Ramzan, R., Muhammad, K., & Wahab, Q. (2015). A sub-10mW, noise cancelling, wideband LNA for UWB applications. International Journal of Electronics and Communications, 69(1), 109–118. https://doi.org/10.1016/j.aeue.2014.08.002 .
5. Ankathi, S., Vignan, S., Athukuri, S., Mohan, S., Balamurugan, K., & Devi, M. N. (2017). A 5–7 GHz current resue and gm-boosted common gate low noise amplifier with LC based ESD protection in 32 nm CMOS. Analog Integrated Circuits and Signal Processing, 90, 573–589. https://doi.org/10.1007/s10470-016-0915-x .
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