A stacked transistor approach to millimeter wave SiGe power amplifiers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/article/10.1007/s10470-018-1282-6/fulltext.html
Reference20 articles.
1. Ezzeddine, A., & Huang, H. (2003). The high voltage high power FET (HiVP). In IEEE radio frequency integrated circuits (RFIC) symposium, 2003 (pp. 215–218). https://doi.org/10.1109/RFIC.2003.1213929 .
2. Farmer, T. J., Darwish, A., Huebschman, B., Viveiros, E., Hung, H. A., & Zaghloul, M. E. (2011). Millimeter-wave sige HBT high voltage/high power architecture implementation. IEEE Microwave and Wireless Components Letters, 21(10), 544–546. https://doi.org/10.1109/LMWC.2011.2164782 .
3. Dabag, H. T., Hanafi, B., Golcuk, F., Agah, A., Buckwalter, J. F., & Asbeck, P. M. (2013). Analysis and design of stacked-fet millimeter-wave power amplifiers. IEEE Transactions on Microwave Theory and Techniques, 61(4), 1543–1556. https://doi.org/10.1109/TMTT.2013.2247698 .
4. Cui, J., Helmi, S., Tang, Y., & Mohammadi, S. (2016). Stacking the deck for efficiency: Rf- to millimeter-wave stacked cmos soi power amplifiers. IEEE Microwave Magazine, 17(12), 55–69. https://doi.org/10.1109/MMM.2016.2608698 .
5. Somesanu, I., & Schumacher, H. (2017). A SiGe:C BiCMOS driver/balun/switch function block for a 30 GHz satcom transmit array. In 2017 IEEE 17th topical meeting on silicon monolithic integrated circuits in RF systems (SiRF) (pp. 47–49).
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