Low leakage 10T SRAM cell with improved data stability in deep sub-micron technologies

Author:

Krishna R.,Duraiswamy Punithavathi

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design of dual port 9T SRAM cell with parallel processing and high performance computing;Physica Scripta;2024-08-20

2. Secure and Reliable Single-Ended 10T SRAM Cell;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. A Single Line 8T SRAM Bit Cell with Robust Read, Hold Stability and Low Power;Lecture Notes in Networks and Systems;2024

4. Comparative Analysis of Various SRAM Bit Cells for 32 nm Technology Node;Lecture Notes in Networks and Systems;2024

5. A Comparative Performance Analysis of 10 T and 11 T SRAM Cells;Lecture Notes in Electrical Engineering;2024

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