A novel design of an ultra-low-cost (m × n) multilayer RAM structure in quantum-dot cellular automata nanotechnology
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
https://link.springer.com/content/pdf/10.1007/s10470-023-02178-4.pdf
Reference21 articles.
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2. Tougaw, P. D., & Lent, C. S. (1994). Logical devices implemented using quantum cellular automata. Journal of Applied Physics. https://doi.org/10.1063/1.356375
3. Kassa, S. R., Nagaria, R. K., & Karthik, R. (2018). Energy efficient neoteric design of a 3-input majority gate with its implementation and physical proof in quantum dot cellular automata. Nano communication networks, 15, 28–40. https://doi.org/10.1016/j.nancom.2018.02.001
4. Salimzadeh, F., & Heikalabad, S. R. (2019). Design of a novel reversible structure for full adder/subtractor in quantum-dot cellular automata. Physica B: Condensed Matter, 556, 163–169. https://doi.org/10.1016/j.physb.2018.12.028
5. Afrooz, S., & Navimipour, N. J. (2017). Memory designing using quantum-dot cellular automata: Systematic literature review, classification and current trends. Journal of Circuits, Systems and Computers,. https://doi.org/10.1142/S0218126617300045
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1. Correction: A novel design of an ultra-low-cost (m × n) multilayer RAM structure in quantum-dot cellular automata nanotechnology;Analog Integrated Circuits and Signal Processing;2023-09
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