Wideband high-isolation SPDT RF switch in 0.18- $$\upmu$$ μ m SiGe BiCMOS technology

Author:

Ha Byeong Wan,Seo Chang Won,Cho Choon Sik,Kim Young-Jin

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference19 articles.

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2. Fan, H., Liu, J., & Wu, Y.-L. (2003). General models and a reduction design technique for FPGA switch box designs. IEEE Transactions on Computers, 52(1), 21–30.

3. Rascher, J., Pinarello, S., Mueller, J.-E., Fischer, G., & Weigel, R. (2012). Highly linear robust RF switch with low insertion loss and high power handling capability in a 65 nm CMOS technology. In IEEE Topiacal Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 21–24).

4. Kuo, W.-M.L., Comeau, J.P., Andrews, J.M., Cressler, J.D., & Mitchell, M.A. (2007). A Comparison of shunt and series/shunt nMOSFET single-pole double-throw switches for X-band phased array T/R modules. In IEEE Topiacal Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 249–252). IEEE SMIC: IEEE.

5. Masuda, S., Yamada, M., Kamada, Y., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., & Shigematsu, H. (2012). GaN single-chip transceiver frontend MMIC for X-band applications. In IEEE MTT-S International Microwave Symposium Digest (pp. 1–3). IEEE IMS: IEEE.

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