Correction: A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs

Author:

Abbasian Erfan,Birla ShilpiORCID,Gholipour Morteza

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Schmitter trigger-based single-ended stable 7T SRAM cell;Analog Integrated Circuits and Signal Processing;2023-09-23

2. A Low Power Feedback Cutting 8T SRAM Cell for Improved Stability;2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT);2023-03-17

3. Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications;Circuits, Systems, and Signal Processing;2022-05-27

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