Parametric analysis on DC and analog/linearity response of multi-channel FinFET (Mch-FinFET) with spacer engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
https://link.springer.com/content/pdf/10.1007/s10470-023-02209-0.pdf
Reference47 articles.
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2. Sze, S. M. (2006). Semiconductor Devices: Physics and Technology, https://doi.org/10.1016/S0026-2692(82)80036-0.
3. Pearce, C. W., & Yaney, D. S. (1985). Short-Channel effects in MOSFET’s. Ieee Electron Device Letters, 6, 326–328. https://doi.org/10.1109/EDL.1985.26143.
4. Jacob, A. P., Xie, R., Sung, M. G., Liebmann, L., Lee, R. T. P., & Taylor, B. (2017). Scaling challenges for Advanced CMOS devices. International Journal of High Speed Electronics and Systems, 26, 1–76. https://doi.org/10.1142/S0129156417400018.
5. Hu, C. (2011). FinFET and other New Transistor Technologies, Talk.
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