A 1.8-V 0.7 ppm/°C high order temperature-compensated CMOS current reference-Reference-Cited by-同舟云学术

A 1.8-V 0.7 ppm/°C high order temperature-compensated CMOS current reference

Published:2007-05-10 Issue:3 Volume:51 Page:175-179
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Lu Yang,Zhang Bo

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/s10470-007-9053-9.pdf

Reference7 articles.

1. Tiew, K.-C., Cusey, J., & Geiger, R. (2002). A curvature compensation technique for bandgap voltage references using adaptive reference temperature. IEEE International Symposium on Circuits and Systems, 4, 265–268.

2. Fiori, F., & Crovetti, P. S. (2005). A new compact temperature-compensated CMOS current reference. IEEE Transactions on Circuits and Systems II: Express Briefs, 52(11), 724–728.

3. Leung, K. N., & Mok, P. K. T. (2002). A sub-1-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device. IEEE Journal of Solid-State Circuits, 37(4), 526–530.

4. Zhang, Q. X., & Siek, L. (2005). A new 4.3-ppm/°C voltage reference using standard CMOS process with 1 V supply voltage. In Circuits and Systems, 2005, ISCAS 2005. IEEE International Symposium on 23–26 May 2005, pp. 4249–4252.

5. Tsividis, Y. P. (1980). Accurate analysis of temperature effects in IC−VBE characteristics with application to bandgap reference sources. IEEE Journal of Solid-State Circuits, 15, 1076–1084.

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