A voltage-mode RF DAC for massive MIMO system-on-chip digital transmitters
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s10470-019-01497-9.pdf
Reference23 articles.
1. Bechthum, E., Radulov, G., Briaire, J., Geelen, G., van Roermund, A . (2015). A 5.3ghz 16b 1.75gs/s wideband rf mixing-dac achieving imd <-82dbc up to 1.9ghz. In 2015 IEEE international solid-state circuits conference—(ISSCC) digest of technical papers, (pp. 1–3). https://doi.org/10.1109/ISSCC.2015.7062980 .
2. Bechthum, E., Radulov, G. I., Briaire, J., Geelen, G. J. G. M., & van Roermund, A. H. M. (2016). A wideband RF mixing-DAC achieving IMD <-82 dBc up to 1.9 GHz. IEEE Journal of Solid-State Circuits, 51(6), 1374–1384. https://doi.org/10.1109/JSSC.2016.2543703 .
3. Engel, G., Clara, M., Zhu, H., Wilkins, P. (2015). A 16-bit 10Gsps current steering RF DAC in 65nm CMOS achieving 65 dBc ACLR multi-carrier performance at 4.5 GHz Fout. In 2015 Symposium on VLSI circuits (VLSI circuits) (pp. C166–C167). https://doi.org/10.1109/VLSIC.2015.7231252 .
4. Erdmann, C., Cullen, E., Brouard, D., Pelliconi, R., Verbruggen, B., Mcgrath, J., Collins, D., Torre, M.D.L., Gay, P., Lynch, P., Lim, P., Collins, A., Farley, B. (2017). A 330 mW 14b 6.8 GS/s dual-mode RF DAC in 16 nm FinFET achieving -70.8 dBc ACPR in a 20 MHz channel at 5.2 GHz. In 2017 IEEE international solid-state circuits conference (ISSCC) (pp. 280–281). https://doi.org/10.1109/ISSCC.2017.7870370 .
5. Farley, B., Erdmann, C., Vaz, B., McGrath, J., Cullen, E., Verbruggen, B., Pelliconi, R., Breathnach, D., Lim, P., Boumaalif, A., Lynch, P., Mesadri, C., Melinn, D., Yap, K.P., Madden, L. (2017) A programmable RFSoC in 16 nm FinFET technology for wideband communications. In 2017 IEEE Asian solid-state circuits conference (A-SSCC) (pp. 1–4). https://doi.org/10.1109/ASSCC.2017.8240201 .
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