Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples-Reference-Cited by-同舟云学术

Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples

Published:1978-04 Issue:4 Volume:15 Page:365-369
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Foti G.,Rimini E.,Tseng W. S.,Mayer J. W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00886154.pdf

Reference17 articles.

1. E. I. Shtyrkov, I. B. Khaibullin, M. M. Zaripov, M. F. Galyatudinov, R. M. Bayazitov: Sov. Phys. Semicond.9, 1309 (1976)

2. G. A. Kachurin, N. B. Pridachin, L. S. Smirnov: Sov. Phys. Semicond.9, 946 (1976)

3. A. Kh. Antonenko, N. N. Gerasimenko, A. V. Dvurechenskii, L. S. Smirnov, G. M. Tseitlin: Sov. Phys. Semicond.10, 81 (1976)

4. G. Vitali, M. Bertolotti, G. Foti, E. Rimini: 7th Int. Conf. on Amorphous and Liquid Semiconductors. Edinburgh (1977). Institute of Physics London (1977)

5. I. B. Khaibullin, E. I. Shtyrkov, M. M. Zaripov, R. M. Bayazitov, M. F. Galyatudinov: “On some pecularities of laser annealing of implanted silicon layers”. First USSR-USA Seminar on Ion Implantation. Albany N. Y. (1977)

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