Author:
Demin V. M.,Zvantsev A. A.,Kramer-Ageev E. A.,Troshin V. S.
Publisher
Springer Science and Business Media LLC
Subject
Nuclear Energy and Engineering
Reference7 articles.
1. H. Sander and B. Gregory, “Transient annealing in semiconductor devices following pulsed neutron irradiation,” IEEE Trans. Nucl. Sci.,13, No. 6, 52–56 (1966).
2. G. Summers and E. Burke, “Correlation of particle-induced displacement damage in silicon,” IEEE Trans. Nucl. Sci.,34, No. 6, 1134 (1987).
3. P. Griffin, J. Kelly, and T. Luera, “Neutron damage equivalence in GaAs,” IEEE Trans. Nucl. Sci.,38, No. 6, 1216–1222 (1991).
4. J. Lindhard, V. Nielsen, M. Scharff, and P. Thomsen, “Integral equations governing radiation effects,” Mat.-Fys. Medd Dan. Vid Silck,33, No. 10, 1–42 (1963).
5. R. Varner, T. Clegg, T. McAbee, and W. Thompson, “Global parameterization of the nucleon-nucleus scattering potential,” Phys. Lett.,185, Nos. 1-2, 6–10 (1987).
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献