1. V.M. Demin, A.A. Zvantsev, E.A. Kramer-Ageev, and V.S. Troshin, “Absorbed neutron energy dissipated in elastic ion-atomic collisions in complex semiconductors,”At. Énerg.,84, No. 2, 151–156 (1998).
2. P. griffin, J. Kelly, T. Luera, et al., “Neutron damage equivalence in GaAs,”IEEE Nucl Sci 38, No. 6, 1216–1221 (1991).
3. B.P. Koba, E.A. Kramer-Ageev, Yu.A. Mironov, and V.V. Yaryna, “Comparison of the changes in the electric characteristics of silicon under irradiation with reactor and 14.5 MeV neutrons,”Fiz. Tekh. Poluprovodn.,9, No. 12, 2362–2364 (1975).
4. Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation Hardness Testing of Electronics, ASTM, E722-94.
5. B. Leskovar, “Radiation effects on optical data transmission systems,”IEEE Nucl. Sci.,36, No. 1, 543–551 (1989).