Transfer matrix modeling of avalanche photodiode

Author:

Olyaee Saeed,Soroosh Mohammad,Izadpanah Mahdieh

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Masudy-Panah S, Moravvej-Farshi M K. An analytic approach to study the effects of optical phonon scattering loss on the characteristics of avalanche photodiodes. IEEE Journal of Quantum Electronics, 2010, 46(4): 533–540

2. Chen W Y, Liu S Y. PIN avalanche photodiode model for circuit simulation. IEEE Journal of Quantum Electronics, 1996, 32(12): 2105–2111

3. Zarifkar A, Soroosh M. Circuit modeling of separate absorption, charge and multiplication avalanche photodiode (SACM-APD). In: Proceedings of IEEE the 6th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM). 2004, 213–219

4. Wu J Y, Wang G. A novel equivalent circuit model for separate-absorption-grading-charge multiplication avalanche photodiode (APD) based optical receiver. Journal of Lightwave Technology, 2010, 28(5): 784–790

5. Jradi K, Pellion D, Esteve D, Boizard J L, Le Padellec A, Bazer-Bachi A R. Computer aided design (CAD) model for silicon avalanche Geiger mode systems design: Application to high sensitivity imaging systems. Nuclear Instruments and Methods in Physics Research A, 2010, 626–627(11–12): 77–81

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