Research on the Technological Progress of CZT Array Detectors
Author:
Li Zhangwen1ORCID, Cheng Jinxing2, Liu Fang1ORCID, Wang Qingbo2, Wen Wei-Wei2, Huang Guangwei2, Wu Zeqian2
Affiliation:
1. College of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China 2. Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 102200, China
Abstract
CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors and summarizes existing research to offer valuable insights for envisioning new detector methodologies.
Funder
Fund for Strengthening Technical Fields of Basic Plan National Key Research and Development Program of China National Natural Science Foundation of China Scientific Research Foundation of China Agricultural University
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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